Invention Grant
- Patent Title: Nitride semiconductor structure
- Patent Title (中): 氮化物半导体结构
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Application No.: US14636163Application Date: 2015-03-02
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Publication No.: US09401403B2Publication Date: 2016-07-26
- Inventor: Hidekazu Umeda , Masahiro Ishida , Tetsuzo Ueda , Daisuke Ueda
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2012-201433 20120913
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/762 ; H01L29/205 ; H01L29/778 ; H01L29/86 ; H01L29/15 ; H01L29/20 ; H01L29/36
Abstract:
A nitride semiconductor structure of the present disclosure comprises a semiconductor substrate, and a layer formed over the semiconductor substrate and comprising plural nitride semiconductor layers. The semiconductor substrate has, from a side thereof near the layer comprising the plural nitride semiconductor layers, a surface region and an internal region in this order. The surface region has a resistivity of 0.1 Ωcm or more, and the internal region has a resistivity of 1000 Ωcm or more.
Public/Granted literature
- US20150171173A1 NITRIDE SEMICONDUCTOR STRUCTURE Public/Granted day:2015-06-18
Information query
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