Invention Grant
- Patent Title: Channel layer for stretchable transistors
- Patent Title (中): 可伸缩晶体管的通道层
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Application No.: US14077444Application Date: 2013-11-12
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Publication No.: US09401487B2Publication Date: 2016-07-26
- Inventor: Jung-kyun Im , Jong-jin Park , Min-woo Park , Min-kwan Shin , Un-yong Jeong
- Applicant: Samsung Electronics Co., Ltd. , Industry-Academic Cooperation Foundation, Yonsei University
- Applicant Address: KR Suwon-si KR Seoul
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee Address: KR Suwon-si KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2012-0127736 20121112
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/05
Abstract:
Provided are a material for forming a channel layer for a stretchable TFT, a method of preparing a channel layer for a stretchable TFT, a channel layer for a stretchable TFT, and a stretchable TFT. The material for forming the channel layer for the stretchable TFT includes an elastomer, an organic semiconductor material and a solvent. By mixing an elastomer and an organic semiconductor material and forming a thin film, a channel layer having an excellent conductivity and stretchability may be obtained.
Public/Granted literature
- US20140131685A1 CHANNEL LAYER FOR STRETCHABLE TRANSISTORS Public/Granted day:2014-05-15
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