Invention Grant
- Patent Title: Memory module and manufacturing method thereof
- Patent Title (中): 内存模块及其制造方法
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Application No.: US14325867Application Date: 2014-07-08
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Publication No.: US09406369B2Publication Date: 2016-08-02
- Inventor: Jong-Hyun Seok , Dohyung Kim , Kwangseop Kim , Young-Ho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0111873 20130917
- Main IPC: H01L23/34
- IPC: H01L23/34 ; G11C11/401 ; G11C5/02 ; G11C5/04
Abstract:
A memory module includes a printed circuit board; first memory chips disposed in parallel with a long axis of the printed circuit board along a first column; second memory chips disposed in parallel with the long axis of the printed circuit board along a second column; and passive elements disposed between the first memory chips and the second memory chips, wherein the passive elements are connected between input/output pins of each of the first and second memory chips and tap pins.
Public/Granted literature
- US20150078055A1 MEMORY MODULE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-03-19
Information query
IPC分类:
