Invention Grant
- Patent Title: Extended redistribution layers bumped wafer
- Patent Title (中): 扩展再分配层撞击晶片
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Application No.: US14214120Application Date: 2014-03-14
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Publication No.: US09406647B2Publication Date: 2016-08-02
- Inventor: Byung Tai Do , Heap Hoe Kuan
- Applicant: STATS ChipPAC, Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L21/60 ; H01L23/00 ; H01L21/683 ; H01L23/31 ; H01L23/498

Abstract:
A semiconductor device is manufactured by, first, providing a wafer, designated with a saw street guide, and having a bond pad formed on an active surface of the wafer. The wafer is taped with a dicing tape. The wafer is singulated along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies. The dicing tape is stretched to expand the plurality of gaps to a predetermined distance. An organic material is deposited into each of the plurality of gaps. A top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies. A redistribution layer is patterned over a portion of the organic material. An under bump metallization (UBM) is deposited over the organic material in electrical communication, through the redistribution layer, with the bond pad.
Public/Granted literature
- US20140197540A1 Extended Redistribution Layers Bumped Wafer Public/Granted day:2014-07-17
Information query
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