Invention Grant
US09406751B2 Method for making strained semiconductor device and related methods
有权
制造应变半导体器件的方法及相关方法
- Patent Title: Method for making strained semiconductor device and related methods
- Patent Title (中): 制造应变半导体器件的方法及相关方法
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Application No.: US14296818Application Date: 2014-06-05
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Publication No.: US09406751B2Publication Date: 2016-08-02
- Inventor: Qing Liu , Xiuyu Cai , Ruilong Xie , Chun-chen Yeh
- Applicant: STMICROELECTRONICS, INC. , GLOBALFOUNDRIES Inc. , INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US TX Coppell KY Grand Cayman US NY Armonk
- Assignee: STMicroelectronics, Inc.,Globalfoundries Inc,International Business Machines Corporation
- Current Assignee: STMicroelectronics, Inc.,Globalfoundries Inc,International Business Machines Corporation
- Current Assignee Address: US TX Coppell KY Grand Cayman US NY Armonk
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L27/12 ; H01L29/786 ; H01L21/84 ; H01L21/8238
Abstract:
A method for making a semiconductor device is provided. Raised source and drain regions are formed with a tensile strain-inducing material, after thermal treatment to form source drain extension regions, to thereby preserve the strain-inducing material in desired substitutional states.
Public/Granted literature
- US20150357243A1 METHOD FOR MAKING STRAINED SEMICONDUCTOR DEVICE AND RELATED METHODS Public/Granted day:2015-12-10
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