发明授权
US09406751B2 Method for making strained semiconductor device and related methods
有权
制造应变半导体器件的方法及相关方法
- 专利标题： Method for making strained semiconductor device and related methods
- 专利标题（中）： 制造应变半导体器件的方法及相关方法
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申请号： US14296818申请日： 2014-06-05
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公开(公告)号： US09406751B2公开(公告)日： 2016-08-02
- 发明人: Qing Liu , Xiuyu Cai , Ruilong Xie , Chun-chen Yeh
- 申请人： STMICROELECTRONICS, INC. , GLOBALFOUNDRIES Inc. , INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US TX Coppell KY Grand Cayman US NY Armonk
- 专利权人： STMicroelectronics, Inc.,Globalfoundries Inc,International Business Machines Corporation
- 当前专利权人： STMicroelectronics, Inc.,Globalfoundries Inc,International Business Machines Corporation
- 当前专利权人地址： US TX Coppell KY Grand Cayman US NY Armonk
- 代理机构： Seed IP Law Group PLLC
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L27/12 ; H01L29/786 ; H01L21/84 ; H01L21/8238
摘要：
A method for making a semiconductor device is provided. Raised source and drain regions are formed with a tensile strain-inducing material, after thermal treatment to form source drain extension regions, to thereby preserve the strain-inducing material in desired substitutional states.
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