Invention Grant
US09409276B2 CMP polishing pad having edge exclusion region of offset concentric groove pattern
有权
CMP抛光垫具有偏移同心凹槽图案的边缘排除区域
- Patent Title: CMP polishing pad having edge exclusion region of offset concentric groove pattern
- Patent Title (中): CMP抛光垫具有偏移同心凹槽图案的边缘排除区域
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Application No.: US14515560Application Date: 2014-10-16
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Publication No.: US09409276B2Publication Date: 2016-08-09
- Inventor: Ching-Ming Tsai , Shi-Wei Cheng , Jia-Cheng Hsu , Kun-Shu Yang , Hui-Feng Chen , Gregory Gaudet , Sheng-Huan Liu
- Applicant: Cabot Microelectronics Corporation
- Applicant Address: US IL Aurora
- Assignee: Cabot Microelectronics Corporation
- Current Assignee: Cabot Microelectronics Corporation
- Current Assignee Address: US IL Aurora
- Agent Thomas Omholt; Arlene Hornilla; Francis J. Koszyk
- Main IPC: B24B37/26
- IPC: B24B37/26
Abstract:
The invention provides a polishing pad and a method of using the polishing pad for chemically-mechanically polishing a substrate. The polishing pad comprises at least a grooved region and an exclusion region, wherein the exclusion region is adjacent to the circumference of the polishing pad, and wherein the exclusion region is devoid of grooves.
Public/Granted literature
- US20150111476A1 CMP POLISHING PAD HAVING EDGE EXCLUSION REGION OF OFFSET CONCENTRIC GROOVE PATTERN Public/Granted day:2015-04-23
Information query
