发明授权
US09409276B2 CMP polishing pad having edge exclusion region of offset concentric groove pattern
有权
CMP抛光垫具有偏移同心凹槽图案的边缘排除区域
- 专利标题： CMP polishing pad having edge exclusion region of offset concentric groove pattern
- 专利标题（中）： CMP抛光垫具有偏移同心凹槽图案的边缘排除区域
-
申请号： US14515560申请日： 2014-10-16
-
公开(公告)号： US09409276B2公开(公告)日： 2016-08-09
- 发明人: Ching-Ming Tsai , Shi-Wei Cheng , Jia-Cheng Hsu , Kun-Shu Yang , Hui-Feng Chen , Gregory Gaudet , Sheng-Huan Liu
- 申请人： Cabot Microelectronics Corporation
- 申请人地址： US IL Aurora
- 专利权人： Cabot Microelectronics Corporation
- 当前专利权人： Cabot Microelectronics Corporation
- 当前专利权人地址： US IL Aurora
- 代理商 Thomas Omholt; Arlene Hornilla; Francis J. Koszyk
- 主分类号： B24B37/26
- IPC分类号： B24B37/26
摘要：
The invention provides a polishing pad and a method of using the polishing pad for chemically-mechanically polishing a substrate. The polishing pad comprises at least a grooved region and an exclusion region, wherein the exclusion region is adjacent to the circumference of the polishing pad, and wherein the exclusion region is devoid of grooves.
公开/授权文献
信息查询
