公开(公告)号：US12157834B2

公开(公告)日：2024-12-03

申请号：US17009961

申请日：2020-09-02

Applicant: Cabot Microelectronics Corporation

Inventor： Sarah Brosnan ,  Brian Reiss

IPC: C09G1/02 ,  B24B1/00 ,  B24B37/04 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321

Abstract: A chemical mechanical polishing composition for polishing a substrate having a polysilicon layer includes a water based liquid carrier, a silica abrasive, an amino acid or guanidine derivative containing polysilicon polishing accelerator, and an alkali metal salt. The composition includes less than about 500 ppm tetraalkylammonium salt and has a pH in a range from about 10 to about 11.

公开(公告)号：US11855258B2

公开(公告)日：2023-12-26

申请号：US16895769

申请日：2020-06-08

Applicant: Cabot Microelectronics Corporation

Inventor： Deepak Shukla ,  Gladys Rocio Montenegro Galindo ,  Kevin M. Donovan ,  Zichao Yang

IPC: H01M10/0565 ,  H01M10/058 ,  H01M10/0525

CPC classification number: H01M10/0565 ,  H01M10/058 ,  H01M10/0525 ,  H01M2300/0082

Abstract: A secondary battery cell includes a cathode of a first electrode material, an anode of a second electrode material, and a solid polymer electrolyte layer disposed between the cathode and anode. The solid polymer electrolyte includes a first surface in contact with the cathode and a second surface in contact with the anode. The solid polymer electrolyte layer includes a cellulosic polymer matrix. The cellulosic polymer matrix includes a network of the cellulosic polymer. Lithium ions are dispersed in the cellulosic polymer matrix. Ceramic particles are dispersed in the cellulosic polymer matrix. The ceramic particles include a metal oxide. One or more plasticizers are dispersed in the cellulosic polymer matrix. One or more polymer networks are in contact with the cellulosic polymer matrix. The one or more polymer networks include an acrylate-containing polymer.

公开(公告)号：US11845156B2

公开(公告)日：2023-12-19

申请号：US16923688

申请日：2020-07-08

Applicant: Cabot Microelectronics Corporation

Inventor： Rui Ma ,  Lin Fu ,  Chen-Chih Tsai ,  Jaeseok Lee ,  Sarah Brosnan

IPC: B24B37/24

CPC classification number: B24B37/24

Abstract: A chemical-mechanical polishing pad comprising a thermosetting polyurethane polishing layer includes an isocyanate-terminated urethane prepolymer, a polyamine curative, and a cyclohexanedimethanol curative. The polyamine curative and the cyclohexanedimethanol curative are in a molar ratio of polyamine curative to cyclohexanedimethanol curative in a range from about 20:1 to about 1:1.

公开(公告)号：US11384253B2

公开(公告)日：2022-07-12

申请号：US16729905

申请日：2019-12-30

Applicant: Cabot Microelectronics Corporation

Inventor： Tong Li

IPC: C09G1/02 ,  H01L21/321 ,  C09K13/00 ,  H01L21/306 ,  C23F1/30 ,  G11B5/84 ,  C23F3/06

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising colloidal silica, (b) a compound of formula (I), (c) a compound of formula (II), (d) hydrogen peroxide, and (e) water, wherein the polishing composition has a pH of about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.

公开(公告)号：US20200224057A1

公开(公告)日：2020-07-16

申请号：US16729905

申请日：2019-12-30

Applicant: Cabot Microelectronics Corporation

Inventor： Tong LI

IPC: C09G1/02 ,  H01L21/321

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising colloidal silica, (b) a compound of formula (I), (c) a compound of formula (II), (d) hydrogen peroxide, and (e) water, wherein the polishing composition has a pH of about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.

公开(公告)号：US20200181454A1

公开(公告)日：2020-06-11

申请号：US16706991

申请日：2019-12-09

Applicant: Cabot Microelectronics Corporation

Inventor： Cheng-Yuan KO ,  Hung-Tsung HUANG ,  Tyler J. CARTER

IPC: C09G1/02 ,  H01L21/321

Abstract: The invention provides a chemical-mechanical polishing composition comprising(a) an abrasive having a Vickers hardness of 16 GPa or more, and (b) a liquid carrier, wherein the polishing composition is substantially free of an oxidizing agent and wherein the polishing composition has a pH of about 0 to about 7. The invention further provides a method of polishing a substrate, especially a substrate comprising ruthenium, with the polishing composition.

公开(公告)号：US20200172762A1

公开(公告)日：2020-06-04

申请号：US16208797

申请日：2018-12-04

Applicant: Cabot Microelectronics Corporation

Inventor： Steven KRAFT ,  Fernando HUNG LOW ,  Roman A. IVANOV ,  Steven GRUMBINE

IPC: C09G1/02 ,  H01L21/321

Abstract: A chemical mechanical polishing composition for polishing a substrate having copper, barrier, and dielectric layers includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including copper, barrier, and dielectric layers includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the copper, barrier, and dielectric layers from the substrate and thereby polish the substrate.

公开(公告)号：US20200056069A1

公开(公告)日：2020-02-20

申请号：US16664235

申请日：2019-10-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Shoutian Li ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105 ,  B24B37/04

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US20190284434A1

公开(公告)日：2019-09-19

申请号：US15920813

申请日：2018-03-14

Applicant: Cabot Microelectronics Corporation

Inventor： Sarah Brosnan

IPC: C09G1/02 ,  H01L21/3105 ,  B24B37/04

Abstract: The invention relates to a chemical-mechanical polishing composition comprising (a) ceria abrasive particles, (b) a cationic polymer, (c) a nonionic polymer comprising polyethylene glycol octadecyl ether, polyethylene glycol lauryl ether, polyethylene glycol oleyl ether, poly(ethylene)-co-poly(ethylene glycol), octylphenoxy poly(ethyleneoxy)ethanol, or a combination thereof, (d) a saturated monoacid, and (e) an aqueous carrier. The invention also relates to a method of polishing a substrate.

公开(公告)号：US10358579B2

公开(公告)日：2019-07-23

申请号：US14094921

申请日：2013-12-03

Applicant: Cabot Microelectronics Corporation

Inventor： Ke Zhang ,  Michael White ,  Tsung-Ho Lee ,  Steven Grumbine ,  Hon-Wu Lau

IPC: G09G1/18 ,  C23F3/06 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  C09G1/18

Abstract: Chemical mechanical polishing (CMP) compositions and methods for planarizing a nickel phosphorus (NiP) substrate are described. A NiP CMP method comprises abrading a surface of the substrate with a CMP composition. The CMP composition comprises a colloidal silica abrasive suspended in an aqueous carrier having a pH of less than 2, and containing a primary oxidizing agent comprising hydrogen peroxide, a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide, a chelating agent, and glycine. The chelating agent comprises two or three carboxylic acid substituents capable of chelating to the metal ion of the secondary oxidizing agent.