Invention Grant
US09411679B2 Code modulation encoder and decoder, memory controller including them, and flash memory system
有权
代码调制编码器和解码器，包括它们的存储器控制器以及闪存系统
- Patent Title: Code modulation encoder and decoder, memory controller including them, and flash memory system
- Patent Title (中): 代码调制编码器和解码器，包括它们的存储器控制器以及闪存系统
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Application No.: US13834010Application Date: 2013-03-15
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Publication No.: US09411679B2Publication Date: 2016-08-09
- Inventor: Changkyu Seol , Junjin Kong , Hong Rak Son , Younggeon Yoo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0054331 20120522
- Main IPC: G11C29/00
- IPC: G11C29/00 ; H03M11/00 ; G06F11/00 ; G06F11/10 ; G06F12/02 ; G11C16/26 ; G11C11/56 ; H01L27/115
Abstract:
Disclosed is a bit-state mapping method of a flash memory system which maps m-bit data (m being a natural number more than 2) onto one of 2m states (voltage threshold distributions). The bit-state mapping method includes performing a subset partitioning operation during first to (m−1)th levels under a condition that two adjacent states are processed as one state; and distinguishing between the adjacent states while processing an (m)th level.
Public/Granted literature
- US20130318420A1 CODE MODULATION ENCODER AND DECODER, MEMORY CONTROLLER INCLUDING THEM, AND FLASH MEMORY SYSTEM Public/Granted day:2013-11-28
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