Invention Grant
US09412824B2 Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex
有权
具有由氧/空位复合体构成的掺杂剂形成的掺杂剂区域的半导体元件
- Patent Title: Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex
- Patent Title (中): 具有由氧/空位复合体构成的掺杂剂形成的掺杂剂区域的半导体元件
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Application No.: US14480705Application Date: 2014-09-09
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Publication No.: US09412824B2Publication Date: 2016-08-09
- Inventor: Thomas Neidhart , Franz Josef Niedernostheide , Hans-Joachim Schulze , Werner Schustereder , Alexander Susiti
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102011113549 20110915
- Main IPC: H01L29/861
- IPC: H01L29/861 ; H01L29/167 ; H01L29/32 ; H01L29/36 ; H01L29/06 ; H01L29/739 ; H01L29/78 ; H01L21/265
Abstract:
A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.
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