Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13934369Application Date: 2013-07-03
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Publication No.: US09412842B2Publication Date: 2016-08-09
- Inventor: Jin-Bum Kim , Kyung-Bum Koo , Taek-Soo Jeon , Tae-Ho Cha , Judson R Holt , Henry K Utomo
- Applicant: SAMSUNG ELECTRONICS CO., LTD. , INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/165 ; H01L21/8234
Abstract:
A gate pattern is formed on a first region of a substrate. An epitaxial layer is formed on a second region of the substrate. A recess is formed in the second region of the substrate by etching the epitaxial layer and the substrate underneath. The first region is adjacent to the second region.
Public/Granted literature
- US20150011070A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2015-01-08
Information query
IPC分类:
