发明授权
- 专利标题: Semiconductor light emitting device and method for manufacturing same
- 专利标题(中): 半导体发光器件及其制造方法
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申请号: US13030453申请日: 2011-02-18
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公开(公告)号: US09412910B2公开(公告)日: 2016-08-09
- 发明人: Toshihide Ito , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
- 申请人: Toshihide Ito , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2010-177403 20100806
- 主分类号: H01L33/42
- IPC分类号: H01L33/42 ; H01L33/44
摘要:
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.
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