发明授权
US09412952B2 Photoelectric conversion element and method of using the same, image sensor, and optical sensor
有权
光电转换元件及其使用方法,图像传感器和光学传感器
- 专利标题: Photoelectric conversion element and method of using the same, image sensor, and optical sensor
- 专利标题(中): 光电转换元件及其使用方法,图像传感器和光学传感器
-
申请号: US14181308申请日: 2014-02-14
-
公开(公告)号: US09412952B2公开(公告)日: 2016-08-09
- 发明人: Eiji Fukuzaki , Kimiatsu Nomura
- 申请人: FUJIFILM CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: FUJIFILM Corporation
- 当前专利权人: FUJIFILM Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 优先权: JP2011-178047 20110816
- 主分类号: H01L51/00
- IPC分类号: H01L51/00 ; H01L51/44 ; B82Y10/00 ; C09B3/14 ; C09B3/78 ; H01L51/42
摘要:
A photoelectric conversion element includes a transparent conductive film, a conductive film, and a photoelectric conversion layer and an electron-blocking layer disposed between the transparent conductive film and the conductive film. The photoelectric conversion layer includes a condensed polycyclic hydrocarbon which contains at least 5 benzene rings, of which a total number of rings is 7 or more and which contains no carbonyl group. The electron-blocking layer includes a compound A having a residue after removal of at least one group of Ra1 to Ra9 from a compound represented by general formula (A) and having a glass transition point (Tg) of 200° C. or more. The photoelectric conversion element exhibits high photoelectric conversion efficiency and low dark current characteristics even after heating treatment, and can be manufactured with high productivity.
公开/授权文献
信息查询
IPC分类: