摘要:
A photoelectric conversion element includes a transparent conductive film, a conductive film, and a photoelectric conversion layer and an electron-blocking layer disposed between the transparent conductive film and the conductive film. The photoelectric conversion layer includes a condensed polycyclic hydrocarbon which contains at least 5 benzene rings, of which a total number of rings is 7 or more and which contains no carbonyl group. The electron-blocking layer includes a compound A having a residue after removal of at least one group of Ra1 to Ra9 from a compound represented by general formula (A) and having a glass transition point (Tg) of 200° C. or more. The photoelectric conversion element exhibits high photoelectric conversion efficiency and low dark current characteristics even after heating treatment, and can be manufactured with high productivity.
摘要:
A photoelectric conversion device comprising an electrically conductive film, an organic photoelectric conversion film, and a transparent electrically conductive film, wherein the organic photoelectric conversion film contains a compound represented by the following formula (1) and an n-type organic semiconductor: wherein each of R1 and R2 independently represents a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group or an unsubstituted heteroaryl group, each of R3 to R11 independently represents a hydrogen atom or a substituent provided that an acidic group is excluded, m represents 0 or 1, n represents an integer of 0 or more, R1 and R2, R3 and R4, R3 and R5, R5 and R6, R6 and R8, R7 and R8, R7 and R9, or R10 and R11 may be combined each other to form a ring, and when n is an integer of 2 or more, out of a plurality of R7's and R8's, a pair of R7's, a pair of R8's, or a pair of R7 and R8 may be combined each other to form a ring.
摘要:
The invention provides a photoelectric conversion element including a photoelectric conversion film excellent in vapor deposition suitability and exhibiting excellent photoelectric conversion efficiency in a case where the photoelectric conversion film is a thin film, an optical sensor, an imaging element, and a compound. The photoelectric conversion element of the embodiment of the invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).
摘要:
A thermoelectric conversion layer contains carbon nanotubes and a surfactant, and in an upper portion and a lower portion and/or a side face end surface and a center, a mass ratio obtained by dividing the carbon nanotubes by the surfactant is higher in the upper portion and/or the end surface than in the other portions. A layer which contains carbon nanotubes and a surfactant and will become a thermoelectric conversion element is formed, the layer is washed with a washing agent which dissolves the surfactant but does not dissolve the carbon nanotubes. Accordingly, provided is a thermoelectric conversion element and a thermoelectric conversion module, each having not only high adhesiveness between the substrate and the thermoelectric conversion layer but also excellent thermoelectric conversion performance; and methods for manufacturing the thermoelectric conversion element and the thermoelectric conversion module.
摘要:
A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer; and a transparent electrically conductive thin layer. The organic photoelectric conversion layer contains: a compound represented by formula (I); and a fullerene or a fullerene derivative.Formula (I): In the formula, Z1 represents an atomic group necessary for forming a 5- or 6-membered ring, L1, L2 and L3 each independently represents an unsubstituted methine group or a substituted methine group, D1 represents an atomic group, and n represents an integer of 0 or more.
摘要:
Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)
摘要:
Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100° C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film. (In Formula (2), R11 and R12 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)
摘要:
The present invention provides a photoelectric conversion element exhibiting excellent responsiveness, and excellent photoelectric conversion efficiency in a case where the photoelectric conversion film is a thin film, an optical sensor, an imaging element which include the photoelectric conversion element, and a compound. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) and having a structure represented by Formula (2).
摘要:
An object of the present invention is to provide an n-type thermoelectric conversion layer, which has a high power factor and exhibits excellent performance stability, a thermoelectric conversion element including the n-type thermoelectric conversion layer, and a composition for forming an n-type thermoelectric conversion layer used in the n-type thermoelectric conversion layer. The n-type thermoelectric conversion layer of the present invention contains carbon nanotubes and an amine compound which is represented by General Formula (1) or (2) and has a C log P value of 2.0 to 8.2.
摘要:
An object of the present invention is to provide a thermoelectric conversion layer having excellent thermoelectric conversion performances (particularly, a power factor and a figure of merit Z). Another object of the present invention is to provide a composition for forming a thermoelectric conversion layer that is used for forming the thermoelectric conversion layer, and a thermoelectric conversion element and a thermoelectric conversion module including the thermoelectric conversion layer.The thermoelectric conversion layer according to an embodiment of the present invention is a thermoelectric conversion layer containing single-layer carbon nanotubes and a dopant, in which the single-layer carbon nanotubes contain semiconducting single-layer carbon nanotubes at a ratio equal to or higher than 95% and have a G/D ratio equal to or higher than 40, and the dopant is an organic dopant having a non-onium salt structure and has an oxidation-reduction potential equal to or higher than 0 V with respect to a saturated calomel electrode.