Invention Grant
- Patent Title: Antenna-coupled metal-insulator-metal rectifier
- Patent Title (中): 天线耦合金属绝缘子金属整流器
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Application No.: US14740588Application Date: 2015-06-16
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Publication No.: US09413063B1Publication Date: 2016-08-09
- Inventor: John T. Apostolos , William Mouyos , Patricia Bodan , Milton Feng , Benjamin McMahon
- Applicant: AMI Research & Development, LLC
- Applicant Address: US MI Grand Haven
- Assignee: R.A. Miller Industries, Inc.
- Current Assignee: R.A. Miller Industries, Inc.
- Current Assignee Address: US MI Grand Haven
- Agency: McGarry Bair PC
- Main IPC: H01B13/00
- IPC: H01B13/00 ; H01L29/06 ; H01Q1/36 ; H01Q9/28 ; C23C8/36 ; C23C8/80

Abstract:
The use of rectennas, or antenna-coupled rectifiers, using metal-insulator-metal tunnel diodes as rectifiers for energy conversion has been explored with more fervor recently, given the advances in nanotechnology fabrication and increased resolution of features. Some have made these devices from symmetric metals (e.g. Ni—NiO—Ni) and asymmetric metals (e.g. Al—AlOx/Pt), and have used deposited oxides as well as native oxides. One key to obtaining a highly asymmetric device with efficient current generation needed for high conversion efficiency is to instead use dissimilar metals and a thin reproducible oxide. The described method allows for a thin, reproducible native oxide of nickel be integrated with any antenna metal to overcome oxide surface roughness problems that typically hamper the practicality of these devices.
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