发明授权
- 专利标题： Electrical chemical plating process
- 专利标题（中）： 电化学镀工艺
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申请号： US13154420申请日： 2011-06-06
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公开(公告)号： US09416459B2公开(公告)日： 2016-08-16
- 发明人: Chun-Ling Lin , Yen-Liang Lu , Chi-Mao Hsu , Chin-Fu Lin , Chun-Hung Chen , Tsun-Min Cheng , Chi-Ray Tsai
- 申请人： Chun-Ling Lin , Yen-Liang Lu , Chi-Mao Hsu , Chin-Fu Lin , Chun-Hung Chen , Tsun-Min Cheng , Chi-Ray Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： C25D5/00
- IPC分类号： C25D5/00 ; C25D7/12
摘要：
An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.
公开/授权文献
- US20120305403A1 Electrical Chemical Plating Process 公开/授权日：2012-12-06
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