发明授权
- 专利标题： Methods for bonding semiconductor wafers
- 专利标题（中）： 接合半导体晶片的方法
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申请号： US14318063申请日： 2014-06-27
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公开(公告)号： US09418830B2公开(公告)日： 2016-08-16
- 发明人: Jeffrey D. Hanna , Robert F. Steimle , Michael D. Turner
- 申请人： Jeffrey D. Hanna , Robert F. Steimle , Michael D. Turner
- 申请人地址： US TX Austin
- 专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; B81C1/00
摘要：
A method of bonding a cap wafer to a device wafer includes heating the device wafer and the cap wafer in the chamber, cooling the device wafer and the cap wafer in the chamber, pressurizing the chamber, introducing gas into the chamber while the chamber is pressurized to accelerate a rate of one of a group consisting of the heating and the cooling, and applying pressure to the device wafer and the cap wafer while a bond is formed between the device wafer and the cap wafer.
公开/授权文献
- US20150380235A1 METHODS FOR BONDING SEMICONDUCTOR WAFERS 公开/授权日：2015-12-31
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