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公开(公告)号：US09418830B2
公开(公告)日：2016-08-16
申请号：US14318063
申请日：2014-06-27
CPC分类号： H01L21/02002 , B81C1/00269 , H01L21/187 , H01L2221/00
摘要： A method of bonding a cap wafer to a device wafer includes heating the device wafer and the cap wafer in the chamber, cooling the device wafer and the cap wafer in the chamber, pressurizing the chamber, introducing gas into the chamber while the chamber is pressurized to accelerate a rate of one of a group consisting of the heating and the cooling, and applying pressure to the device wafer and the cap wafer while a bond is formed between the device wafer and the cap wafer.
摘要翻译： 将盖晶片接合到器件晶片的方法包括在腔室中加热器件晶片和盖晶片，冷却腔室中的器件晶片和盖晶片，对腔室加压，同时在腔室被加压的同时将气体引入腔室 以加速由加热和冷却组成的组中的一个的速率，以及在器件晶片和盖晶片之间形成结合时向器件晶片和盖晶片施加压力。
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公开(公告)号：US20150380235A1
公开(公告)日：2015-12-31
申请号：US14318063
申请日：2014-06-27
IPC分类号： H01L21/02
CPC分类号： H01L21/02002 , B81C1/00269 , H01L21/187 , H01L2221/00
摘要： A method of bonding a cap wafer to a device wafer includes heating the device wafer and the cap wafer in the chamber, cooling the device wafer and the cap wafer in the chamber, pressurizing the chamber, introducing gas into the chamber while the chamber is pressurized to accelerate a rate of one of a group consisting of the heating and the cooling, and applying pressure to the device wafer and the cap wafer while a bond is formed between the device wafer and the cap wafer.
摘要翻译： 将盖晶片接合到器件晶片的方法包括在腔室中加热器件晶片和盖晶片，冷却腔室中的器件晶片和盖晶片，对腔室加压，同时在腔室被加压的同时将气体引入腔室 以加速由加热和冷却组成的组中的一个的速率，以及在器件晶片和盖晶片之间形成结合时向器件晶片和盖晶片施加压力。
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