Invention Grant
- Patent Title: Integrated device comprising high density interconnects in inorganic layers and redistribution layers in organic layers
- Patent Title (中): 集成器件包括无机层中的高密度互连和有机层中的再分布层
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Application No.: US14324136Application Date: 2014-07-04
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Publication No.: US09418877B2Publication Date: 2016-08-16
- Inventor: Shiqun Gu , Ratibor Radojcic , Dong Wook Kim , Jae Sik Lee
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L21/48 ; H01L23/538 ; H01L23/00 ; H01L25/00 ; H01L25/065 ; H01L23/48 ; H01L23/498 ; H01L21/768 ; H01L23/31 ; H01L23/14 ; H01L25/10 ; H01L23/15
Abstract:
Some novel features pertain to an integrated device (e.g., integrated package) that includes a base portion for the integrated device, a first die (e.g., first wafer level die), and a second die (e.g., second wafer level die). The base portion includes a first inorganic dielectric layer, a first set of interconnects located in the first inorganic dielectric layer, a second dielectric layer different from the first inorganic dielectric layer, and a set of redistribution metal layers in the second dielectric layer. The first die is coupled to a first surface of the base portion. The second die is coupled to the first surface of the base portion, the second die is electrically coupled to the first die through the first set of interconnects.
Public/Granted literature
Information query
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