发明授权
- 专利标题： MIM capacitors with improved reliability
- 专利标题（中）： MIM电容器具有更高的可靠性
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申请号： US14525412申请日： 2014-10-28
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公开(公告)号： US09418999B2公开(公告)日： 2016-08-16
- 发明人: Chih-Ta Wu , Jason Lee , Chung Chien Wang , Hsing-Lien Lin , Yu-Jen Wang , Yeur-Luen Tu , Chern-Yow Hsu , Yuan-Hung Liu , Chi-Hsin Lo , Chia-Shiung Tsai
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/8244 ; H01L27/108 ; H01L49/02
摘要：
A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.
公开/授权文献
- US20150041874A1 MIM Capacitors with Improved Reliability 公开/授权日：2015-02-12
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