发明授权
- 专利标题： Complementary metal oxide semiconductor device and method of manufacturing the same
- 专利标题（中）： 互补金属氧化物半导体器件及其制造方法
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申请号： US14259569申请日： 2014-04-23
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公开(公告)号： US09425104B2公开(公告)日： 2016-08-23
- 发明人: Moon-seung Yang , Mohammad Rakib Uddin , Myoung-jae Lee , Sang-moon Lee , Sung-hun Lee , Seong-ho Cho
- 申请人： Moon-seung Yang , Mohammad Rakib Uddin , Myoung-jae Lee , Sang-moon Lee , Sung-hun Lee , Seong-ho Cho
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2013-0107502 20130906
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L21/8238 ; H01L21/8252 ; H01L21/8258 ; H01L27/06 ; H01L27/092
摘要：
Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer including a group III-V material is disposed on the buffer layer. A second layer including a group IV material is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer.