Invention Grant
US09431306B2 Methods of forming fin isolation regions on FinFET semiconductor devices using an oxidation-blocking layer of material and by performing a fin-trimming process
有权
在使用材料的氧化阻挡层的FinFET半导体器件上形成散热片隔离区域的方法以及进行鳍片修整工艺
- Patent Title: Methods of forming fin isolation regions on FinFET semiconductor devices using an oxidation-blocking layer of material and by performing a fin-trimming process
- Patent Title (中): 在使用材料的氧化阻挡层的FinFET半导体器件上形成散热片隔离区域的方法以及进行鳍片修整工艺
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Application No.: US15075437Application Date: 2016-03-21
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Publication No.: US09431306B2Publication Date: 2016-08-30
- Inventor: Ajey Poovannummoottil Jacob , Bruce Doris , Kangguo Cheng , Ali Khakifirooz , Kern Rim
- Applicant: GLOBALFOUNDRIES Inc. , International Business Machines Corporation
- Applicant Address: KY Grand Cayman US NY Armonk
- Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation
- Current Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation
- Current Assignee Address: KY Grand Cayman US NY Armonk
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/84 ; H01L21/8234 ; H01L29/66 ; H01L29/06 ; H01L21/3105

Abstract:
A method includes forming a plurality of trenches to define a fin, forming a first layer of insulating material in the trenches, forming a sidewall spacer on opposite sides of the fin above an upper surface of the first layer, removing the first layer and performing a fin-trimming etching process to define a plurality of increased-size trenches. The method also includes forming a first oxidation-blocking layer of insulating material in the increased-size trenches, forming a second layer of insulating material above the oxidation-blocking layer, and performing a thermal anneal process to convert at least a part of the portion of the fin that is in contact with the second layer of insulating material into an oxide fin isolation region.
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