发明授权
- 专利标题： Three dimensional device integration method and integrated device
- 专利标题（中）： 三维设备集成方法和集成设备
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申请号： US15064467申请日： 2016-03-08
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公开(公告)号： US09431368B2公开(公告)日： 2016-08-30
- 发明人: Paul M. Enquist , Gaius Gillman Fountain, Jr.
- 申请人： ZIPTRONIX, INC.
- 申请人地址： US NC Morrisville
- 专利权人： ZIPTRONIX, INC.
- 当前专利权人： ZIPTRONIX, INC.
- 当前专利权人地址： US NC Morrisville
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 主分类号： H01L21/58
- IPC分类号： H01L21/58 ; H01L23/00 ; H01L21/20 ; H01L21/683 ; H01L21/768 ; H01L21/822 ; H01L23/13 ; H01L23/36 ; H01L23/48 ; H01L23/538 ; H01L25/065 ; H01L25/16 ; H01L25/00 ; H01L27/06 ; H01L21/762 ; H01L23/552 ; H01L25/18 ; H01L27/146
摘要：
A method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed.
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