Invention Grant
US09431396B2 Single diffusion break with improved isolation and process window and reduced cost
有权
单个扩散断裂，改进隔离和工艺窗口，降低成本
- Patent Title: Single diffusion break with improved isolation and process window and reduced cost
- Patent Title (中): 单个扩散断裂，改进隔离和工艺窗口，降低成本
-
Application No.: US14609564Application Date: 2015-01-30
-
Publication No.: US09431396B2Publication Date: 2016-08-30
- Inventor: Hui Zang , Bingwu Liu
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/78 ; H01L27/088 ; H01L29/10 ; H01L21/8234 ; H01L21/762 ; H01L21/3213 ; H01L21/02 ; H01L27/02 ; H01L21/28 ; H01L29/66 ; H01L29/417
Abstract:
Methods of forming a SDB with a partial or complete insulator structure formed over the SDB and resulting devices are provided. Embodiments include forming a SDB with a first width in a substrate; forming a first metal gate in an ILD on top of the SDB, with a second width larger than the first width; forming second and third metal gates in the ILD on the substrate on opposite sides of the first metal gate, the second and third metal gates laterally separated from the first metal gate; forming a photoresist over the second and third gates; removing the first metal gate down to the SDB, forming a cavity; removing the photoresist; and filling the cavity with an insulator layer.
Public/Granted literature
- US20160225762A1 SINGLE DIFFUSION BREAK WITH IMPROVED ISOLATION AND PROCESS WINDOW AND REDUCED COST Public/Granted day:2016-08-04
Information query
IPC分类:
