发明授权
- 专利标题: Integrated circuit protection during high-current ESD testing
- 专利标题(中): 在大电流ESD测试期间集成电路保护
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申请号: US13446394申请日: 2012-04-13
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公开(公告)号: US09435841B2公开(公告)日: 2016-09-06
- 发明人: Shunhua Chang , James Paul Di Sarro , Robert J. Gauthier, Jr. , Nathan Jack , Souvick Mitra
- 申请人: Shunhua Chang , James Paul Di Sarro , Robert J. Gauthier, Jr. , Nathan Jack , Souvick Mitra
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 L. Jeffrey Kelly; Steven Meyers
- 主分类号: H02H9/00
- IPC分类号: H02H9/00 ; G01R31/00 ; H02H9/04 ; G01R31/28 ; H01L27/02 ; H05K9/00
摘要:
A method of protecting devices within an integrated circuit during electro-static discharge (ESD) testing using an ESD test system is provided. The method includes applying a direct current (DC) bias voltage to an input of at least one device of the integrated circuit and applying an ESD simulated signal to at least one other input of the integrated circuit. The applied ESD simulated signal is conducted along a first current path to a first ground, while a low-current signal associated with the at least one device is conducted along a second current path to the second ground. The DC bias voltage is maintained between the input of the at least one device and the second ground at a substantially constant value in response to a signal variation on the second ground that results from the applied ESD simulated signal.
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