Invention Grant
US09436078B2 Method for a low profile etchable EUV absorber layer with embedded particles in a photolithography mask
有权
在光刻掩模中具有嵌入颗粒的低轮廓可蚀刻的EUV吸收层的方法
- Patent Title: Method for a low profile etchable EUV absorber layer with embedded particles in a photolithography mask
- Patent Title (中): 在光刻掩模中具有嵌入颗粒的低轮廓可蚀刻的EUV吸收层的方法
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Application No.: US14609588Application Date: 2015-01-30
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Publication No.: US09436078B2Publication Date: 2016-09-06
- Inventor: Lei Sun , Obert Reeves Wood, II
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/22

Abstract:
Methods for creating a EUV photolithography mask with a thinner highly EUV absorbing absorber layer and the resulting device are disclosed. Embodiments include forming a multilayer reflector (MLR); forming first and second layers of a first EUV absorbing material over the MLR, the second layer being between the first layer and the MLR; and implanting the first layer with particles of a second EUV absorbing material, wherein the first EUV absorbing material is etchable and has a lower EUV absorption coefficient than the second EUV absorbing material, and wherein the implanted particles are substantially separated from each other.
Public/Granted literature
- US20160223896A1 METHOD FOR A LOW PROFILE ETCHABLE EUV ABSORBER LAYER WITH EMBEDDED PARTICLES IN A PHOTOLITHOGRAPHY MASK Public/Granted day:2016-08-04
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