Invention Grant
US09436078B2 Method for a low profile etchable EUV absorber layer with embedded particles in a photolithography mask 有权
在光刻掩模中具有嵌入颗粒的低轮廓可蚀刻的EUV吸收层的方法

Method for a low profile etchable EUV absorber layer with embedded particles in a photolithography mask
Abstract:
Methods for creating a EUV photolithography mask with a thinner highly EUV absorbing absorber layer and the resulting device are disclosed. Embodiments include forming a multilayer reflector (MLR); forming first and second layers of a first EUV absorbing material over the MLR, the second layer being between the first layer and the MLR; and implanting the first layer with particles of a second EUV absorbing material, wherein the first EUV absorbing material is etchable and has a lower EUV absorption coefficient than the second EUV absorbing material, and wherein the implanted particles are substantially separated from each other.
Information query
Patent Agency Ranking
0/0