发明授权
US09437481B2 Self-aligned double patterning process for two dimensional patterns
有权
用于二维图案的自对准双重图案化工艺
- 专利标题： Self-aligned double patterning process for two dimensional patterns
- 专利标题（中）： 用于二维图案的自对准双重图案化工艺
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申请号： US14674792申请日： 2015-03-31
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公开(公告)号： US09437481B2公开(公告)日： 2016-09-06
- 发明人: Lei Yuan , Jia Zeng , Youngtag Woo , Jongwook Kye
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/768 ; H01L21/3213 ; H01L21/311 ; H01L21/033 ; H01L21/027
摘要：
One method includes forming a mandrel element above a hard mask layer, forming first and second spacers on the mandrel element, removing the mandrel element, a first opening being defined between the first and second spacers and exposing a portion of the hard mask layer and having a longitudinal axis extending in a first direction, forming a block mask covering a middle portion of the first opening, the block mask having a longitudinal axis extending in a second direction different than the first direction, etching the hard mask layer in the presence of the block mask and the first and second spacers to define aligned first and second line segment openings in the hard mask layer extending in the first direction, etching recesses in a dielectric layer disposed beneath the hard mask layer based on the first and second line segment openings, and filling the recesses with a conductive material.
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