Invention Grant
US09437482B2 Semiconductor device and method of forming shielding layer over active surface of semiconductor die
有权
在半导体管芯的有源表面上形成屏蔽层的半导体器件和方法
- Patent Title: Semiconductor device and method of forming shielding layer over active surface of semiconductor die
- Patent Title (中): 在半导体管芯的有源表面上形成屏蔽层的半导体器件和方法
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Application No.: US14303484Application Date: 2014-06-12
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Publication No.: US09437482B2Publication Date: 2016-09-06
- Inventor: Reza A. Pagaila
- Applicant: STATS ChipPAC, Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L23/552 ; H01L23/00 ; H01L21/3205
Abstract:
A semiconductor wafer contains a plurality of semiconductor die separated by a non-active area of the semiconductor wafer. A plurality of contact pads is formed on an active surface of the semiconductor die. A first insulating layer is formed over the semiconductor wafer. A portion of the first insulating layer is removed to expose the contact pads on the semiconductor die. An opening is formed partially through the semiconductor wafer in the active surface of the semiconductor die or in the non-active area of the semiconductor wafer. A second insulating layer is formed in the opening in the semiconductor wafer. A shielding layer is formed over the active surface. The shielding layer extends into the opening of the semiconductor wafer to form a conductive via. A portion of a back surface of the semiconductor wafer is removed to singulate the semiconductor die.
Public/Granted literature
- US20140291820A1 Semiconductor Device and Method of Forming Shielding Layer Over Active Surface of Semiconductor Die Public/Granted day:2014-10-02
Information query
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