Invention Grant
US09442364B2 Mask blank for reflection-type exposure, and mask for reflection-type exposure
有权
用于反射型曝光的掩模空白,以及用于反射型曝光的掩模
- Patent Title: Mask blank for reflection-type exposure, and mask for reflection-type exposure
- Patent Title (中): 用于反射型曝光的掩模空白,以及用于反射型曝光的掩模
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Application No.: US14221994Application Date: 2014-03-21
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Publication No.: US09442364B2Publication Date: 2016-09-13
- Inventor: Yutaka Kodera , Yo Sakata , Masato Kon
- Applicant: TOPPAN PRINTING CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: TOPPAN PRINTING CO., LTD.
- Current Assignee: TOPPAN PRINTING CO., LTD.
- Current Assignee Address: JP Tokyo
- Priority: JP2011-212635 20110928; JP2011-233553 20111025
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/40 ; G03F1/60

Abstract:
A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (11), a multilayer reflective film (12), a protective film (13), an absorption film (14), and a reverse-surface conductive film (15). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO2, TiO2, and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.
Public/Granted literature
- US20140205936A1 MASK BLANK FOR REFLECTION-TYPE EXPOSURE, AND MASK FOR REFLECTION-TYPE EXPOSURE Public/Granted day:2014-07-24
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