Invention Grant
- Patent Title: Memory controller supporting rate-compatible punctured codes
- Patent Title (中): 内存控制器支持速率兼容的穿孔码
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Application No.: US14629228Application Date: 2015-02-23
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Publication No.: US09442796B2Publication Date: 2016-09-13
- Inventor: William H. Radke
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H03M13/00
- IPC: H03M13/00 ; G06F11/10 ; G11C29/52 ; H03M13/23 ; H03M13/35

Abstract:
Apparatus and methods store data in a non-volatile solid state memory device according to a rate-compatible code, such as a rate-compatible convolutional code (RPCC). An example of such a memory device is a flash memory device. Data can initially be block encoded for error correction and detection. The block-coded data can be further convolutionally encoded. Convolutional-coded data can be punctured and stored in the memory device. The puncturing decreases the amount of memory used to store the data. Depending on conditions, the amount of puncturing can vary from no puncturing to a relatively high amount of puncturing to vary the amount of additional error correction provided and memory used. The punctured data can be decoded when data is to be read from the memory device.
Public/Granted literature
- US20150234704A1 MEMORY CONTROLLER SUPPORTING RATE-COMPATIBLE PUNCTURED CODES Public/Granted day:2015-08-20
Information query
IPC分类: