Invention Grant
US09443737B2 Method of forming metal contacts in the barrier layer of a group III-N HEMT
有权
在III-N族HEMT的阻挡层中形成金属接触的方法
- Patent Title: Method of forming metal contacts in the barrier layer of a group III-N HEMT
- Patent Title (中): 在III-N族HEMT的阻挡层中形成金属接触的方法
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Application No.: US13856016Application Date: 2013-04-03
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Publication No.: US09443737B2Publication Date: 2016-09-13
- Inventor: Yoshikazu Kondo , Shoji Wada , Hiroshi Yamasaki , Masahiro Iwamoto
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/28 ; H01L29/778 ; H01L21/283 ; H01L21/306 ; H01L29/66 ; H01L21/285 ; H01L29/45 ; H01L29/20
Abstract:
Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.
Public/Granted literature
- US20140302672A1 Method of Forming Metal Contacts in the Barrier Layer of a Group III-N HEMT Public/Granted day:2014-10-09
Information query
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