Invention Grant
- Patent Title: 3DIC stacking device and method of manufacture
- Patent Title (中): 3DIC堆垛装置及其制造方法
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Application No.: US13619877Application Date: 2012-09-14
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Publication No.: US09443783B2Publication Date: 2016-09-13
- Inventor: Jing-Cheng Lin , Chen-Hua Yu
- Applicant: Jing-Cheng Lin , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/498 ; H01L23/538 ; H01L21/56 ; H01L25/03 ; H01L25/00 ; H01L21/768 ; H01L23/00
Abstract:
A system and method for stacking semiconductor devices in three dimensions is provided. In an embodiment two or more semiconductor dies are attached to a carrier and encapsulated. Connections of the two or more semiconductor dies are exposed, and the two or more semiconductor dies may be thinned to form connections on an opposite side. Additional semiconductor dies may then be placed in either an offset or overhanging position.
Public/Granted literature
- US20140001645A1 3DIC Stacking Device and Method of Manufacture Public/Granted day:2014-01-02
Information query
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