Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14446344Application Date: 2014-07-30
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Publication No.: US09443927B2Publication Date: 2016-09-13
- Inventor: Lu-An Chen , Tien-Hao Tang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L29/06 ; H01L29/78 ; H01L29/08 ; H01L29/10

Abstract:
A semiconductor device includes a substrate, a gate positioned on the substrate, a drain region and a source region formed in the substrate at two respectively sides of the gate, a first well region formed in the substrate, and a plurality of first doped islands formed in the source region. The drain region and the source region include a first conductivity, and the first well region and the first doped islands include a second conductivity. The source region is formed in the first well region, and the first doped islands are spaced apart from the first well region.
Public/Granted literature
- US20160035823A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-02-04
Information query
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