Invention Grant
US09443936B2 Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
有权
量子井MOSFET通道与金属源/漏极具有晶格失配，以及保形再生长源/漏极
- Patent Title: Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains
- Patent Title (中): 量子井MOSFET通道与金属源/漏极具有晶格失配，以及保形再生长源/漏极
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Application No.: US13870184Application Date: 2013-04-25
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Publication No.: US09443936B2Publication Date: 2016-09-13
- Inventor: Prashant Majhi , Mantu K. Hudait , Jack T. Kavalieros , Ravi Pillarisetty , Marko Radosavljevic , Gilbert Dewey , Titash Rakshit , Willman Tsai
- Applicant: Prashant Majhi , Mantu K. Hudait , Jack T. Kavalieros , Ravi Pillarisetty , Marko Radosavljevic , Gilbert Dewey , Titash Rakshit , Willman Tsai
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/285 ; H01L21/768 ; H01L29/417 ; H01L29/66 ; H01L29/778 ; H01L29/78 ; H01L29/80 ; H01L29/165 ; H01L29/51
Abstract:
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.
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