Invention Grant
- Patent Title: Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication
- Patent Title (中): 用于垂直磁隧道结装置的短路径的氧化镁封盖及其制造方法
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Application No.: US14483104Application Date: 2014-09-10
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Publication No.: US09444035B2Publication Date: 2016-09-13
- Inventor: Chando Park , Kangho Lee , Jimmy Kan , Matthias Georg Gottwald , Xiaochun Zhu , Seung Hyuk Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; H01L43/12 ; H01L43/08
Abstract:
A magnetic tunnel junction (MTJ) device includes a pinned layer, a tunnel barrier layer on the pinned layer, and a free layer on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer, a capping layer on the PMA enhancement layer, and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. A method of fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes forming a capping layer, a perpendicular magnetic anisotropic (PMA) enhancement layer and a free layer. The method also includes forming a conductive layer to short the capping layer, the PMA enhancement layer and the free layer.
Public/Granted literature
- US20160072043A1 MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICES Public/Granted day:2016-03-10
Information query
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