发明授权
- 专利标题： Method of manufacturing light-emitting device, and evaporation donor substrate
- 专利标题（中）： 制造发光装置的方法和蒸发供体基板
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申请号： US13442133申请日： 2012-04-09
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公开(公告)号： US09444051B2公开(公告)日： 2016-09-13
- 发明人: Tomoya Aoyama , Yosuke Sato , Kohei Yokoyama , Rena Takahashi
- 申请人： Tomoya Aoyama , Yosuke Sato , Kohei Yokoyama , Rena Takahashi
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP2007-275066 20071023
- 主分类号： H01L51/00
- IPC分类号： H01L51/00 ; B41M5/382 ; C23C14/04 ; H01L51/50
摘要：
The present invention relates to a donor substrate and a method of manufacturing a light-emitting device. The donor substrate includes a reflective layer including an opening portion, a light absorption layer covering the opening portion of the reflective layer over the reflective layer, a heat insulating layer including an opening portion in a position overlapped with the opening portion of the reflective layer over the light absorption layer, and a material layer including a light-emitting material covering the opening portion of the heat insulating layer over the heat insulating layer. A target substrate and the donor substrate are disposed to face each other, and an EL layer is formed over the target substrate by performing light irradiation from a rear surface of the donor substrate.
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