Invention Grant
US09444058B2 Preparation of pi-extended naphthalene diimides and their use as semiconductor
有权
制备π-延伸的萘二酰亚胺及其作为半导体的用途
- Patent Title: Preparation of pi-extended naphthalene diimides and their use as semiconductor
- Patent Title (中): 制备π-延伸的萘二酰亚胺及其作为半导体的用途
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Application No.: US14786024Application Date: 2014-04-22
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Publication No.: US09444058B2Publication Date: 2016-09-13
- Inventor: Thomas Geβner , Sabin-Lucian Suraru , Frank Würthner
- Applicant: BASF SE
- Applicant Address: DE
- Assignee: BASF SE
- Current Assignee: BASF SE
- Current Assignee Address: DE
- Agency: Drinker Biddle & Reath LLP
- Priority: EP13165368 20130425
- International Application: PCT/IB2014/060902 WO 20140422
- International Announcement: WO2014/174435 WO 20141030
- Main IPC: C07D471/22
- IPC: C07D471/22 ; H01L29/772 ; H01L51/00 ; C07D491/22 ; C09B5/62 ; C09B23/01 ; C09B23/04 ; H01G9/20 ; H01L51/05
Abstract:
The present invention provides the compounds of formulae and electronic devices comprising these compounds.
Public/Granted literature
- US20160104846A1 PREPARATION OF PI-EXTENDED NAPHTHALENE DIIMIDES AND THEIR USE AS SEMICONDUCTOR Public/Granted day:2016-04-14
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