Reduction of intermodulation distortion in a high-frequency switch is achieved. A semiconductor device (1) includes an antenna terminal (ANT_LB), plural external terminals (RX_LB, TX_LB, TRX_LB, TERM_LB), plural first high-frequency switches (101 to 104), and plural control terminals. Each first high-frequency switch includes plural first field-effect transistors, plural first resistors (Rg_1 to Rg_6) connected to the gate terminals of the first field-effect transistors, and a second resistor (Rc) disposed between the corresponding control terminal and the first resistors. The second resistor in the first high-frequency switch disposed between the first terminal supplied with an RF transmission signal and an RF reception signal of a frequency division duplex system and the antenna terminal is configured so that linearity of current-voltage characteristics thereof is higher than linearity of current-voltage characteristics of the first resistor.