Invention Grant
US09448473B2 Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
有权
使用成形束带电粒子束光刻法压裂和形成图案的方法
- Patent Title: Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
- Patent Title (中): 使用成形束带电粒子束光刻法压裂和形成图案的方法
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Application No.: US14970505Application Date: 2015-12-15
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Publication No.: US09448473B2Publication Date: 2016-09-20
- Inventor: Akira Fujimura , Michael Tucker
- Applicant: D2S, Inc.
- Applicant Address: US CA San Jose
- Assignee: D2S, Inc.
- Current Assignee: D2S, Inc.
- Current Assignee Address: US CA San Jose
- Agency: The Mueller Law Office, P.C.
- Main IPC: G03F1/70
- IPC: G03F1/70 ; G03F1/78 ; G03F7/20 ; G06F17/50 ; H01J37/317 ; B82Y10/00 ; B82Y40/00 ; H01J37/302

Abstract:
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, where a non-circular target pattern to be formed on a surface is input. A plurality of charged particle beam shots for a multi-beam charged particle beam system is determined, where the plurality of shots will form a pattern on the surface, each charged particle beam shot being a multi-beam shot comprising a plurality of circular or nearly-circular beamlets. The pattern on the surface matches the target pattern within a predetermined tolerance. The determining is performed using a computing hardware device.
Public/Granted literature
- US20160103390A1 Method For Fracturing And Forming A Pattern Using Shaped Beam Charged Particle Beam Lithography Public/Granted day:2016-04-14
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