发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13376081申请日： 2009-06-05
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公开(公告)号： US09449883B2公开(公告)日： 2016-09-20
- 发明人: Hisayuki Kato , Yoshihiko Kusakabe
- 申请人： Hisayuki Kato , Yoshihiko Kusakabe
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 国际申请： PCT/JP2009/060315 WO 20090605
- 国际公布： WO2010/140244 WO 20101209
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8234 ; H01L21/8238 ; H01L21/66 ; H01L29/51 ; H01L29/66
摘要：
First protective films are formed to cover side surfaces of gate electrode portions. In an nMOS region, an extention implantation region is formed by causing a portion of the first protective film located on the side surface of the gate electrode portion to function as an offset spacer and using the offset spacer as a mask, and then, cleaning is done. Since silicon nitride films are formed on surfaces of the first protective films, the resistance to chemical solutions is improved. Furthermore, second protective films are formed on the first protective films, respectively. In a pMOS region, an extention implantation region is formed by causing a portion of the first protective film and a portion of the second protective film located on the side surface of the gate electrode portion to function as an offset spacer and using the offset spacer as the mask, and then, cleaning is done.
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