Invention Grant
US09449887B2 Method of forming replacement gate PFET having TiALCO layer for improved NBTI performance
有权
形成具有TiALCO层的替代栅极PFET以提高NBTI性能的方法
- Patent Title: Method of forming replacement gate PFET having TiALCO layer for improved NBTI performance
- Patent Title (中): 形成具有TiALCO层的替代栅极PFET以提高NBTI性能的方法
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Application No.: US14563009Application Date: 2014-12-08
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Publication No.: US09449887B2Publication Date: 2016-09-20
- Inventor: Takashi Ando , Balaji Kannan , Vijay Narayanan
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/49 ; H01L21/28 ; H01L29/66
Abstract:
A method of forming a transistor device includes forming an interfacial layer and a dielectric layer over a substrate; and forming a workfunction metal layer over the dielectric layer, the workfunction metal layer comprising a titanium-aluminum-carbon-oxygen (TiAlCO) layer.
Public/Granted literature
- US20160163814A1 REPLACEMENT GATE PFET MATERIALS HAVING IMPROVED NBTI PERFORMANCE Public/Granted day:2016-06-09
Information query
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