Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14582935Application Date: 2014-12-24
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Publication No.: US09449915B2Publication Date: 2016-09-20
- Inventor: Hong-Ji Lee , Hsu-Sheng Yu
- Applicant: MACRONIX International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/522 ; H01L21/768 ; H01L29/06
Abstract:
Provided is a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate and a dielectric layer. The dielectric layer is located on the substrate. The dielectric layer has a plurality of openings, and side walls of the openings have concave-and-convex profile.
Public/Granted literature
- US20160190061A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-06-30
Information query
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