公开(公告)号：US20160190061A1

公开(公告)日：2016-06-30

申请号：US14582935

申请日：2014-12-24

Applicant: MACRONIX International Co., Ltd.

Inventor： Hong-Ji Lee ,  Hsu-Sheng Yu

IPC: H01L23/522 ,  H01L29/06 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate and a dielectric layer. The dielectric layer is located on the substrate. The dielectric layer has a plurality of openings, and side walls of the openings have concave-and-convex profile.

Abstract translation: 提供一种半导体器件及其制造方法。 半导体器件包括衬底和电介质层。 电介质层位于衬底上。 电介质层具有多个开口，开口的侧壁具有凹凸形状。

公开(公告)号：US20150179514A1

公开(公告)日：2015-06-25

申请号：US14138038

申请日：2013-12-21

Applicant: Macronix International Co., Ltd.

Inventor： Hsu-Sheng Yu ,  Hong-Ji Lee ,  N.T. Lian ,  T.H. Yang

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/67 ,  H01L23/522

CPC classification number: H01L21/76879 ,  H01L21/67207 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cluster tool is disclosed that can increase throughput of a wafer fabrication process by facilitating removal of barrier overhang in contact holes of contact film stacks. Individual chambers of the cluster tool provide for deposition of barrier material onto a semiconductor structure, depositing over with an amorphous carbon film (ACF), etching back the ACF, and etching a corner region of the contact hole. Removal of the barrier overhang improves the quality of metal fill-in of the contact hole. An expectedly ensuing feature entails a technique in which filling-in of the contact hole with a metal such as tungsten can be achieved with attenuated or eliminated adverse consequence.

Abstract translation: 公开了一种集群工具，其可以通过有助于去除接触膜堆叠的接触孔中的阻挡突出部来增加晶片制造工艺的生产量。 集群工具的单个室提供阻挡材料沉积到半导体结构上，用无定形碳膜（ACF）沉积，对ACF进行蚀刻，并蚀刻接触孔的拐角区域。 阻挡突出部的移除提高了接触孔的金属填充质量。 预期的随后特征需要一种技术，其中可以通过减弱或消除不利后果来实现用诸如钨的金属填充接触孔。

公开(公告)号：US09449915B2

公开(公告)日：2016-09-20

申请号：US14582935

申请日：2014-12-24

Applicant: MACRONIX International Co., Ltd.

Inventor： Hong-Ji Lee ,  Hsu-Sheng Yu

IPC: H01L23/52 ,  H01L23/522 ,  H01L21/768 ,  H01L29/06

CPC classification number: H01L23/5226 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/0649 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate and a dielectric layer. The dielectric layer is located on the substrate. The dielectric layer has a plurality of openings, and side walls of the openings have concave-and-convex profile.

Abstract translation: 提供一种半导体器件及其制造方法。 半导体器件包括衬底和电介质层。 电介质层位于衬底上。 电介质层具有多个开口，开口的侧壁具有凹凸形状。

公开(公告)号：US09425086B2

公开(公告)日：2016-08-23

申请号：US14138007

申请日：2013-12-21

Applicant: Macronix International Co., Ltd.

Inventor： Fang-Hao Hsu ,  Hsu-Sheng Yu ,  Kuo-Feng Lo ,  Hong-Ji Lee

IPC: H01L21/768 ,  H01L23/485 ,  H01L23/31 ,  H01L23/532

CPC classification number: H01L21/76802 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76804 ,  H01L21/76831 ,  H01L23/3192 ,  H01L23/485 ,  H01L23/53257 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A method of eliminating overhang in a contact hole formed in a contact film stack is described. A liner layer is overlaid on the contact film stack, the liner also coating the contact hole. A portion of the liner is removed to expose the overhang, and the exposed overhang is removed. The liner is also used to fill-in a bowing profile of the contact hole, thereby rendering sidewalls of the contact hole smooth and straight suitable for metal fill-in while suppressing piping defects.

Abstract translation: 描述了形成在接触膜叠层中的接触孔中消除悬垂的方法。 衬垫层覆盖在接触膜叠层上，衬垫也涂覆接触孔。 衬里的一部分被去除以露出突出端，并且去除暴露的突出端。 衬套也用于填充接触孔的弯曲轮廓，从而使接触孔的侧壁平滑和直线适于金属填充，同时抑制管道缺陷。

公开(公告)号：US09305840B2

公开(公告)日：2016-04-05

申请号：US14138038

申请日：2013-12-21

Applicant: Macronix International Co., Ltd.

Inventor： Hsu-Sheng Yu ,  Hong-Ji Lee ,  N. T. Lian ,  T. H. Yang

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/67

CPC classification number: H01L21/76879 ,  H01L21/67207 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cluster tool is disclosed that can increase throughput of a wafer fabrication process by facilitating removal of barrier overhang in contact holes of contact film stacks. Individual chambers of the cluster tool provide for deposition of barrier material onto a semiconductor structure, depositing over with an amorphous carbon film (ACF), etching back the ACF, and etching a corner region of the contact hole. Removal of the barrier overhang improves the quality of metal fill-in of the contact hole. An expectedly ensuing feature entails a technique in which filling-in of the contact hole with a metal such as tungsten can be achieved with attenuated or eliminated adverse consequence.

Abstract translation: 公开了一种集群工具，其可以通过有助于去除接触膜堆叠的接触孔中的阻挡突出部来增加晶片制造工艺的生产量。 集群工具的单个室提供阻挡材料沉积到半导体结构上，用无定形碳膜（ACF）沉积，对ACF进行蚀刻，并蚀刻接触孔的拐角区域。 阻挡突出部的移除提高了接触孔的金属填充质量。 预期的随后特征需要一种技术，其中可以通过减弱或消除不利后果来实现用诸如钨的金属填充接触孔。

公开(公告)号：US20150179569A1

公开(公告)日：2015-06-25

申请号：US14138007

申请日：2013-12-21

Applicant: Macronix International Co., Ltd.

Inventor： Fang-Hao Hsu ,  Hsu-Sheng Yu ,  Kuo-Feng Lo ,  Hong-Ji Lee

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76804 ,  H01L21/76831 ,  H01L23/3192 ,  H01L23/485 ,  H01L23/53257 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A method of eliminating overhang in a contact hole formed in a contact film stack is described. A liner layer is overlaid on the contact film stack, the liner also coating the contact hole. A portion of the liner is removed to expose the overhang, and the exposed overhang is removed. The liner is also used to fill-in a bowing profile of the contact hole, thereby rendering sidewalls of the contact hole smooth and straight suitable for metal fill-in while suppressing piping defects.

Abstract translation: 描述了形成在接触膜叠层中的接触孔中消除悬垂的方法。 衬垫层覆盖在接触膜叠层上，衬垫也涂覆接触孔。 衬里的一部分被去除以露出突出端，并且去除暴露的突出端。 衬套也用于填充接触孔的弯曲轮廓，从而使接触孔的侧壁平滑和直线适于金属填充，同时抑制管道缺陷。