Invention Grant
- Patent Title: Integrated passive devices
- Patent Title (中): 集成无源器件
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Application No.: US13782939Application Date: 2013-03-01
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Publication No.: US09449925B2Publication Date: 2016-09-20
- Inventor: Yaojian Lin , Haijing Cao , Qing Zhang , Kang Chen , Jianmin Fang
- Applicant: STATS ChipPAC, Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L23/538 ; H01L23/00 ; H01L27/12 ; H01L49/02 ; H01L21/683 ; H01L23/498 ; H01L23/50

Abstract:
A semiconductor device has integrated passive circuit elements. A first substrate is formed on a backside of the semiconductor device. The passive circuit element is formed over the insulating layer. The passive circuit element can be an inductor, capacitor, or resistor. A passivation layer is formed over the passive circuit element. A carrier is attached to the passivation layer. The first substrate is removed. A non-silicon substrate is formed over the insulating layer on the backside of the semiconductor device. The non-silicon substrate is made with glass, molding compound, epoxy, polymer, or polymer composite. An adhesive layer is formed between the non-silicon substrate and insulating layer. A via is formed between the insulating layer and first passivation layer. The carrier is removed. An under bump metallization is formed over the passivation layer in electrical contact with the passive circuit element. A solder bump is formed on the under bump metallization.
Public/Granted literature
- US20130175668A1 Semiconductor Device and Method of Making Integrated Passive Devices Public/Granted day:2013-07-11
Information query
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