Invention Grant
- Patent Title: Wafer-level encapsulated semiconductor device, and method for fabricating same
- Patent Title (中): 晶圆级封装半导体器件及其制造方法
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Application No.: US14542169Application Date: 2014-11-14
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Publication No.: US09450004B2Publication Date: 2016-09-20
- Inventor: Chih-Hung Tu , Wei-Feng Lin
- Applicant: OmniVision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Lathrop & Gage LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/82

Abstract:
An encapsulated semiconductor device includes a device die with a semiconductor device fabricated thereon. A carrier layer opposite the device die covers the semiconductor device. A dam supports the carrier layer above the device die, the dam being located therebetween. The semiconductor device further includes a first sealant portion for attaching the dam to the device die, and a means for attaching the dam to the carrier layer. The device die, the dam, and the carrier layer form a sealed cavity enclosing the semiconductor device.A method of encapsulating semiconductor devices formed on a device wafer includes forming an assembly including a carrier wafer and a plurality of dams thereon. After the step of forming, the method attaches the plurality of dams to the device wafer to form a respective plurality of encapsulated semiconductor devices.
Public/Granted literature
- US20160141320A1 Wafer-Level Encapsulated Semiconductor Device, And Method For Fabricating Same Public/Granted day:2016-05-19
Information query
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