Trenched-bonding-dam device and manufacturing method for same

    公开(公告)号:US10157943B2

    公开(公告)日:2018-12-18

    申请号:US15004584

    申请日:2016-01-22

    Abstract: Trenched-bonding-dam devices and corresponding methods of manufacture are provided. A trenched-bonding-dam device includes a bonding dam structure positioned upon a top surface of a substrate. The bonding dam structure has a bottom surface attached to a top surface of the substrate, an inner dam surrounded by an outer dam, and a trench between the inner and outer dams. The device may further include an optics system including a lens and an adhesive positioned within a bonding region between a bottom surface of the optics system and a top surface of at least one of the inner and outer dams. The trench may be dimensioned to receive a portion of the excess adhesive flowing laterally out of the bonding region during bonding of the substrate to the optics system, laterally confining the excess adhesive and reducing lateral bleeding of the adhesive.

    Wafer-level encapsulated semiconductor device, and method for fabricating same
    3.
    发明授权
    Wafer-level encapsulated semiconductor device, and method for fabricating same 有权
    晶圆级封装半导体器件及其制造方法

    公开(公告)号:US09450004B2

    公开(公告)日:2016-09-20

    申请号:US14542169

    申请日:2014-11-14

    Abstract: An encapsulated semiconductor device includes a device die with a semiconductor device fabricated thereon. A carrier layer opposite the device die covers the semiconductor device. A dam supports the carrier layer above the device die, the dam being located therebetween. The semiconductor device further includes a first sealant portion for attaching the dam to the device die, and a means for attaching the dam to the carrier layer. The device die, the dam, and the carrier layer form a sealed cavity enclosing the semiconductor device.A method of encapsulating semiconductor devices formed on a device wafer includes forming an assembly including a carrier wafer and a plurality of dams thereon. After the step of forming, the method attaches the plurality of dams to the device wafer to form a respective plurality of encapsulated semiconductor devices.

    Abstract translation: 封装形成在器件晶片上的半导体器件的方法包括在其上形成包括载体晶片和多个堤坝的组件。 在形成步骤之后,该方法将多个堤坝连接到器件晶片以形成相应的多个封装的半导体器件。

    Wafer-Level Encapsulated Semiconductor Device, And Method For Fabricating Same
    4.
    发明申请
    Wafer-Level Encapsulated Semiconductor Device, And Method For Fabricating Same 有权
    晶圆级封装半导体器件及其制造方法

    公开(公告)号:US20160141320A1

    公开(公告)日:2016-05-19

    申请号:US14542169

    申请日:2014-11-14

    Abstract: An encapsulated semiconductor device includes a device die with a semiconductor device fabricated thereon. A carrier layer opposite the device die covers the semiconductor device. A dam supports the carrier layer above the device die, the dam being located therebetween. The semiconductor device further includes a first sealant portion for attaching the dam to the device die, and a means for attaching the dam to the carrier layer. The device die, the dam, and the carrier layer form a sealed cavity enclosing the semiconductor device.A method of encapsulating semiconductor devices formed on a device wafer includes forming an assembly including a carrier wafer and a plurality of dams thereon. After the step of forming, the method attaches the plurality of dams to the device wafer to form a respective plurality of encapsulated semiconductor devices.

    Abstract translation: 封装的半导体器件包括在其上制造半导体器件的器件裸片。 与器件裸片相对的载体层覆盖半导体器件。 大坝支撑设备模具上方的载体层,坝体位于其间。 所述半导体器件还包括用于将所述大坝附接到所述器件裸片的第一密封剂部分和用于将所述大坝附着到所述载体层的装置。 器件裸片,大坝和载体层形成封闭半导体器件的密封腔。 封装形成在器件晶片上的半导体器件的方法包括在其上形成包括载体晶片和多个堤坝的组件。 在形成步骤之后,该方法将多个堤坝连接到器件晶片以形成相应的多个封装的半导体器件。

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