发明授权
- 专利标题： Lateral DMOS device with dummy gate
- 专利标题（中）： 具有虚拟门的侧面DMOS设备
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申请号： US13351295申请日： 2012-01-17
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公开(公告)号： US09450056B2公开(公告)日： 2016-09-20
- 发明人: Chun-Wai Ng , Ruey-Hsin Liu , Jun Cai , Hsueh-Liang Chou , Chi-Chih Chen
- 申请人： Chun-Wai Ng , Ruey-Hsin Liu , Jun Cai , Hsueh-Liang Chou , Chi-Chih Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/40 ; H01L29/423 ; H01L29/06
摘要：
An LDMOS transistor with a dummy gate comprises an extended drift region formed over a substrate, a drain region formed in the extended drift region, a channel region formed in the extended drift region, a source region formed in the channel region and a dielectric layer formed over the extended drift region. The LDMOS transistor with a dummy gate further comprises an active gate formed over the channel region and a dummy gate formed over the extended drift region. The dummy gate helps to reduce the gate charge of the LDMOS transistor while maintaining the breakdown voltage of the LDMOS transistor.
公开/授权文献
- US20130181285A1 Lateral DMOS Device with Dummy Gate 公开/授权日：2013-07-18
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