Invention Grant
US09453283B2 Method for manufacturing nanowires 有权
制造纳米线的方法

Method for manufacturing nanowires
Abstract:
A method of manufacturing a nanowire includes: forming a silicon oxide layer by performing deposition of a silicon oxide on a substrate; forming a metal layer by performing deposition of a metal on the silicon oxide layer; forming a metal agglomerate by performing heat treatment on the substrate where the metal layer is formed; and growing a nanowire in an area where the metal agglomerate is formed by performing plasma treatment on the substrate where the metal agglomerate is formed.
Public/Granted literature
Information query
Patent Agency Ranking
0/0