Invention Grant
- Patent Title: Method for manufacturing nanowires
- Patent Title (中): 制造纳米线的方法
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Application No.: US14624318Application Date: 2015-02-17
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Publication No.: US09453283B2Publication Date: 2016-09-27
- Inventor: Kyung Min Choi
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2014-0105634 20140814
- Main IPC: C23C16/56
- IPC: C23C16/56 ; C23C14/16 ; C23C16/40 ; C23C14/00 ; C25D7/06

Abstract:
A method of manufacturing a nanowire includes: forming a silicon oxide layer by performing deposition of a silicon oxide on a substrate; forming a metal layer by performing deposition of a metal on the silicon oxide layer; forming a metal agglomerate by performing heat treatment on the substrate where the metal layer is formed; and growing a nanowire in an area where the metal agglomerate is formed by performing plasma treatment on the substrate where the metal agglomerate is formed.
Public/Granted literature
- US20160047048A1 METHOD FOR MANUFACTURING NANOWIRES Public/Granted day:2016-02-18
Information query
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