Invention Grant
US09455140B2 Methods of forming doped epitaxial SiGe material on semiconductor devices
有权
在半导体器件上形成掺杂的外延SiGe材料的方法
- Patent Title: Methods of forming doped epitaxial SiGe material on semiconductor devices
- Patent Title (中): 在半导体器件上形成掺杂的外延SiGe材料的方法
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Application No.: US14525351Application Date: 2014-10-28
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Publication No.: US09455140B2Publication Date: 2016-09-27
- Inventor: Ajey Poovannummoottil Jacob , Jody A. Fronheiser , Murat Kerem Akarvardar
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/265 ; H01L21/324 ; H01L29/66 ; H01L29/78 ; H01L21/18
Abstract:
One illustrative method disclosed herein includes, among other things, performing first and second in situ doping, epitaxial deposition processes to form first and second layers of in situ doped epi semiconductor material, respectively, above a semiconductor substrate, wherein one of the first and second layers has a high level of germanium and a low level of P-type dopant material and the other of the first and second layers has a low level of germanium and a high level of P-type dopant material, and performing a mixing thermal anneal process on the first and second layers so as to form the final silicon germanium material having a high level of germanium and a high level of P-type dopant material.
Public/Granted literature
- US20160118251A1 METHODS OF FORMING DOPED EPITAXIAL SiGe MATERIAL ON SEMICONDUCTOR DEVICES Public/Granted day:2016-04-28
Information query
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