Invention Grant
- Patent Title: Kerf preparation for backside metallization
- Patent Title (中): 背面金属化的Kerf准备
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Application No.: US14226666Application Date: 2014-03-26
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Publication No.: US09455192B2Publication Date: 2016-09-27
- Inventor: Michael Roesner , Manfred Engelhardt , Johann Schmid , Gudrun Stranzl , Joachim Hirschler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/78 ; H01L21/768 ; H01L23/00 ; H01L21/02 ; H01L21/311
Abstract:
In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes attaching a substrate to a carrier using an adhesive component and forming a through trench through the substrate to expose the adhesive component. At least a portion of the adhesive component is etched and a metal layer is formed over sidewalls of the through trench.
Public/Granted literature
- US20150279740A1 Kerf Preparation for Backside Metallization Public/Granted day:2015-10-01
Information query
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