发明授权
- 专利标题： Low threshold voltage CMOS device
- 专利标题（中）： 低阈值CMOS器件
-
申请号： US14992739申请日： 2016-01-11
-
公开(公告)号： US09455203B2公开(公告)日： 2016-09-27
- 发明人: Takashi Ando , Changhwan Choi , Kisik Choi , Vijay Narayanan
- 申请人： International Business Machines Corporation , Global Foundries Inc
- 申请人地址： US NY Armonk KY Grand Cayman
- 专利权人： International Business Machines Corporation,Global Foundries Inc.
- 当前专利权人： International Business Machines Corporation,Global Foundries Inc.
- 当前专利权人地址： US NY Armonk KY Grand Cayman
- 代理机构： Law Offices of Ira D. Blecker, P.C.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/28 ; H01L29/49 ; H01L29/51 ; H01L29/66 ; H01L21/02 ; H01L29/161 ; H01L29/10
摘要：
A replacement metal gate process in which a high-k dielectric is applied. The high-k dielectric may be doped with lanthanum in an NMOS region or aluminum in a PMOS region. A dummy gate structure may be formed over the high-k dielectric and etched to form an opening over the NMOS region and an opening over the PMOS region. Thereafter, first work function metals are deposited in the NMOS opening and second work function metals are applied in the PMOS openings. A suitable gate electrode material may then fill the remainder of the NMOS and PMOS openings.
公开/授权文献
- US20160126145A1 LOW THRESHOLD VOLTAGE CMOS DEVICE 公开/授权日：2016-05-05
信息查询
IPC分类:
